Band gap tuning in aluminum doped two-dimensional hexagonal boron nitride-Reference-Cited by-同舟云学术

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Band gap tuning in aluminum doped two-dimensional hexagonal boron nitride

Published:2020-08 Issue: Volume:250 Page:123176
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Legesse Merid,Rashkeev Sergey N.,Saidaoui Hamed,El Mellouhi Fedwa,Ahzi Said,Alharbi Fahhad H.

Funder

Qatar National Research Fund

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference62 articles.

1. Hexagonal boron nitride is an indirect bandgap semiconductor;Cassabois;Nat. Photon.,2016

2. Van der Waals heterostructures;Geim;Nature,2013

3. Boron nitride substrates for high-quality graphene electronics;Dean;Nat. Nanotechnol.,2010

4. Boron nitride nanotubes and nanosheets;Golberg;ACS Nano,2010

5. Calculation of ground-state and optical properties of boron nitrides in the hexagonal, cubic, and wurtzite structures;Xu;Phys. Rev. B,1991

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