Growth of Quaternary GaxCe1-xOyNz passivation layer for silicon based metal-oxide-semiconductor capacitor
Author:
Funder
Universiti Sains Malaysia
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference28 articles.
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1. Surface passivation of silicon substrate by ternary GaxCeyOz layers grown via combination of forming gas and oxygen at different temperatures;Ceramics International;2024-07
2. Effects of Varying Annealing Ambient towards Performance of Ternary GaxCeyOz Passivation Layers for Metal-Oxide-Semiconductor Capacitor;International Journal of Energy Research;2024-02-16
3. Growth of gallium cerium oxide passivation layer on 4H-Silicon carbide substrate and its metal-oxide-semiconductor characteristics;Ceramics International;2024-01
4. Alteration in growth temperatures of metal-organic decomposed GaxCe1-xOyNz passivation layer in nitrogen/oxygen/nitrogen ambient;Ceramics International;2023-05
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