Chemical vapor deposition and electrical characterization of sub-10nm diameter InSb nanowires and field-effect transistors-Reference-Cited by-同舟云学术

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Chemical vapor deposition and electrical characterization of sub-10nm diameter InSb nanowires and field-effect transistors

Published:2010-06 Issue:3 Volume:121 Page:397-401
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Paul Rajat Kanti,Penchev Miroslav,Zhong Jiebin,Ozkan Mihrimah,Ghazinejad Maziar,Jing Xiaoye,Yengel Emre,Ozkan Cengiz S.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Functional Nanowires

2. Nanowire-based one-dimensional electronics

3. Nanowire photonics

4. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

5. Directed Assembly of One-Dimensional Nanostructures into Functional Networks

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1. Energy Levels of Nanodots Inside Semiconductor Nanowires;Brazilian Journal of Physics;2024-06-11

2. Unraveling the effects of non-parabolicity on electron energy levels in InP/InAs/InP heterostructures;Physica Scripta;2024-06-07

3. Adjusting the crystal size of InSb nanowires for optical band gap energy modification;Materials Chemistry and Physics;2020-11

4. Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD;Journal of Alloys and Compounds;2020-05

5. Gallium-assisted growth of InSb nanowire;Revista Mexicana de Física;2019-10-31

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