Improvement of physical properties of IGZO thin films prepared by excimer laser annealing of sol–gel derived precursor films
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference43 articles.
1. Present status of amorphous In–Ga–Zn–O thin-film transistors
2. The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays
3. Amorphous In–Ga–Zn–O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays
4. Transparent ring oscillator based on indium gallium oxide thin-film transistors
5. Fast Thin-Film Transistor Circuits Based on Amorphous Oxide Semiconductor
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1. Memristor characteristics of a Ga–Al–O/Ga–Sn–O/Ga–Al–O stack device fabricated using mist chemical vapor deposition;Japanese Journal of Applied Physics;2024-06-03
2. Solution-processed IGZO field-effect transistors with a three-step laser annealing process;Journal of Materials Science: Materials in Electronics;2024-04
3. Pulsed laser crystallization of sol-gel derived cerium oxide thin films;Journal of Sol-Gel Science and Technology;2023-09-27
4. Printing flexible thin-film transistors;Applied Physics Reviews;2023-09-01
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