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Package-induced catastrophic mirror damage of 980-nm GaAs high-power laser

  • Published:2004-12 Issue:2-3 Volume:88 Page:410-416
  • ISSN:0254-0584
  • Container-title:Materials Chemistry and Physics
  • language:en
  • Short-container-title:Materials Chemistry and Physics

Author:

Park Jongwoo,Shin D.-S.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Optical Telecommunications IV A Components;Schmidt,2002

2. Proceedings of the 27th Annual Boulder Damage Symposium on Laser-Induced Damage in Optical Materials, 1995;Sharps,1996

3. Generic Reliability Assurance Requirements for Optoelectronic Devices Used in Telecommunications Equipment, Telcordia GR-468-CORE, Issue 1, 1998.

4. Experimental procedures to characterize acid—base and dispersion force contributions to solid wettability A review

5. Test Method Standard Microcircuit, MIL-STD-883E, 1996.

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1. New mechanisms of cavity facet degradation for GaN-based laser diodes;Journal of Applied Physics;2021-06-14

2. Evaluation of high power laser diodes for space applications: effects of the gaseous environment and mechanical stress in their long term performance;International Conference on Space Optics — ICSO 2014;2017-11-17

3. Study on Effects of Solder Fluxes on Catastrophic Mirror Damages During Laser Diode Packaging;IEEE Transactions on Components, Packaging and Manufacturing Technology;2013-01

4. InGaN Laser Diode Degradation;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23

5. Performance Study of a 980 nm GaAs Based Laser Diode Chip in a Moisture Condensing Environment;Journal of Electronic Packaging;2012-03-01
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