Deposition and post-deposition annealing of thin Y2O3 film on n-type Si in argon ambient
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference70 articles.
1. High dielectric constant oxides
2. Alternative Gate Dielectrics for Microelectronics
3. Structural and Electrical Characterizations of Yttrium Oxide Films after Postannealing Treatments
4. Band offsets and Schottky barrier heights of high dielectric constant oxides
5. Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si
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