The structural, electrical and optical properties of Mg-doped ZnO with different interstitial Mg concentration-Reference-Cited by-同舟云学术

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The structural, electrical and optical properties of Mg-doped ZnO with different interstitial Mg concentration

Published:2016-10 Issue: Volume:182 Page:15-21
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Hu Yonghong,Zeng Haibo,Du Jifu,Hu Ziyu,Zhang Shengli

Funder

Jiangsu province postdoctoral Fund Project

National Basic Research Program of China

NSFC

NSF of Jiangsu Province

Opened Fund of the State Key Laboratory on Integrated Optoelectronics

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference42 articles.

1. Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization

2. Point defect characterization of GaN and ZnO

3. Semiconductors: Data Handbook;Madelung,2004

4. A comprehensive review of ZnO materials and devices

5. Ab-initio investigation of structural, electronic and optical properties for three phases of ZnO compound

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