Electrical transport and optical properties of Al doped polycrystalline SiGe alloy thin film-Reference-Cited by-同舟云学术

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Electrical transport and optical properties of Al doped polycrystalline SiGe alloy thin film

Published:2021-01 Issue: Volume:258 Page:123944
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Sain Twisha,Kishan Singh Ch,Amaladass E.P.,Ilango S.,Mathews T.,Mani Awadhesh

Funder

MSG

IGCAR

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference45 articles.

1. Next generation device grade silicon-germanium on insulator;Littlejohns;Sci. Rep.,2015

2. Compact analytical threshold-voltage model of nanoscale fully depleted etrained-silicon on silicon-germanium-on-insulator (SGOI) MOSFETs;Venkataraman;IEEE Trans. Electron. Dev.,2007

3. Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics;Sadoh;Jpn. J. Appl. Phys.,2016

4. High-hole-mobility silicon germanium on insulator substrates with high crystalline quality obtained by the germanium condensation technique;Souriau;J. Electrochem. SCOCIETY.,2009

5. Silicon , Germanium and Their Alloys Growth, Defects, Impurities, and Nanocrystals;Gudrun Kissinger,2015

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evidence of weak-antilocalization phenomenon in Al-induced crystallization grown polycrystalline-SiGe thin film;Materials Letters;2021-10

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