Author:
El Besseghi M.,Aissat A.,Alshehri B.,Dogheche K.,Dogheche E.H.,Decoster D.
Subject
Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Transit time considerations in p-i-n diodes;Lucovsky;J. Appl. Phys.,1964
2. Ultrawide-bande long-wavelength p-i-n photodetectors;Bowers;J. Lightwave Technol.,1987
3. Design of ultrawide-band, high-sensitivity p-i-n photodetectors;Kato;IEICE Trans. Electron.,1993
4. Analysis of InGaAs p-i-n photodiode frequency response;Sabella;IEEE J. Quantum Electron.,1993
5. Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector;Effenberger;J. Lightwave Technol.,1996
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