Influence of illumination on the output characteristics in pentacene thin film transistors
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference26 articles.
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5. Photoinduced doping effect of pentacene field effect transistor in oxygen atmosphere studied by displacement current measurement
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1. Understanding Illumination Effect on Saturation Behavior of Thin Film Transistor;Photonics;2023-03-13
2. Electrical characteristics of Al/(GO:PTCDA)/p-type Si structure under dark and light illumination: photovoltaic properties at 40 mW cm−2;Journal of Materials Science: Materials in Electronics;2022-03-24
3. Electrical and surface properties of SiO2 films modified by ultraviolet irradiation and used as gate dielectrics for pentacene thin-film transistor applications;Chinese Journal of Physics;2019-10
4. Temperature-dependent hole transport for pentacene thin-film transistors with a SiO2 gate dielectric modified by (NH4)2S treatment;Microelectronics Reliability;2018-02
5. Temperature-dependent field-effect carrier mobility in organic thin-film transistors with a gate SiO2 dielectric modified by H2O2 treatment;Applied Physics A;2018-01-25
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