Multi-ion controllable metal halide ionic structure for selective short- and long-term memorable synaptic devices-Reference-Cited by-同舟云学术

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Multi-ion controllable metal halide ionic structure for selective short- and long-term memorable synaptic devices

Published:2024-04 Issue: Volume:55 Page:102184
ISSN:1748-0132
Container-title:Nano Today
language:en
Short-container-title:Nano Today

Author:

Lee Daseul,Lee Seung-Jea,Kim Jae Ho,Kim Geonguk,Jung Wan-Gil,Park Juyun,Kang Yong-Cheol,Kim Young-Hoon,Song Myungkwan,Kim Han Seul,Choi Jin Woo

Funder

Korea Institute of Science and Technology Information

Korea Institute of Materials Science

National Research Foundation of Korea

Ministry of Education, Science and Technology

Publisher

Elsevier BV

Reference70 articles.

1. Synaptic electronics: materials, devices and applications

2. Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor

3. A phenomenological memristor model for short-term/long-term memory

4. Using volatile/non-volatile memristor for emulating the short-and long-term adaptation behavior of the biological neurons

5. Bistable Resistive Switching in Al[sub 2]O[sub 3] Memory Thin Films

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1. Tunable sub-threshold current firing via insulator-to-metal transition enabled by lithographic nanochannels for neuromorphic applications;Applied Materials Today;2024-10

2. A mini review of recently progress on halide perovskite memristor devices: materials sciences, challenges and applications;Materials Today Energy;2024-09

3. Artificial tactile system for pressure monitoring in extracorporeal circulation processes;APL Materials;2024-04-01

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