Is the Lewis-acid behavior of GaH3 comparable to that of BH3 and AlH3? A DFT comparison study of H3AXH3 (A=B, Al, Ga and X=N, P, As) donor–acceptor complexes-Reference-Cited by-同舟云学术

Is the Lewis-acid behavior of GaH3 comparable to that of BH3 and AlH3? A DFT comparison study of H3AXH3 (A=B, Al, Ga and X=N, P, As) donor–acceptor complexes

Published:2004-11 Issue:1-3 Volume:709 Page:117-122
ISSN:0166-1280
Container-title:Journal of Molecular Structure: THEOCHEM
language:en
Short-container-title:Journal of Molecular Structure: THEOCHEM

Author:

El Guerraze Abdelaâli,Anane Hafid,Serrar Chafiq,Es-sofi Abderrahman,Lamsabhi Al Mokhtar,Jarid Abdellah

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Biochemistry

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1. Trimethylamine complexes of alane as precursors for the low-pressure chemical vapor deposition of aluminum

2. Aluminum thin film growth by the thermal decomposition of triethylamine alane

3. Organometallic precursors in the growth of epitaxial thin films of III-V semiconductors by metal-organic chemical vapor deposition (MOCVD)

4. Reactions of gallium hydrides with 1,4-di-t-butyl-1,4-diazabutadiene; subvalent and hydrometallation products

5. Gallane adducts of bifunctional Group V ligands; crystal structures of (GaH3)2(tmen) and (GaH3)2(dmpe)

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