Study of material removal behavior on R-plane of sapphire during ultra-precision machining based on modified slip-fracture model

Author:

Kwon Suk Bum,Nagaraj Aditya,Yoon Hae-Sung,Min Sangkee

Funder

NSF

University of Wisconsin-Madison

FANUC

Publisher

AIP Publishing

Subject

Automotive Engineering

Reference14 articles.

1. One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters;Iida;Phys Status Solidi A,2007

2. Experimental study on brittle–ductile transition in elliptical ultrasonic assisted grinding (EUAG) of monocrystal sapphire using single diamond abrasive grain;Liang;Int J Mach,2013

3. Ductile regime nanomachining of single-crystal silicon carbide;Patten;J Manuf Sci Eng,2005

4. The brittle–ductile transition in silicon. I. Experiments;Samuels;P Roy Soc A Math Phys,1989

5. A predictive model of the critical undeformed chip thickness for ductile–brittle transition in nano-machining of brittle materials;Arif;J Manuf Sci Eng,2013

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