Raman enhancement (SERS) of the surface phonon modes of TiO2
Author:
Funder
National Science Foundation
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference18 articles.
1. The Theory of Surface Enhanced Raman Scattering in Semiconductors;Lombardi;Phys. Chem. C,2014
2. Enhanced Raman Spectroscopy of nanostructed semiconductor phonon modes;Ma;J. Chem. Phys. Letts.,2011
3. Coupled exciton and charge-transfer resonances in the Raman enhancement of phonon modes of CdSe quantum dots (QDs);Islam;J. Phys. Chem. C,2014
4. Enhancement of surface phonon modes in the Raman spectrum of ZnSe nanoparticles on adsorption of 4-mercaptopyridine;Islam;J. Chem. Phys.,2014
5. X. Xue, W. Ji, Z. Mao, H. Mao, Y. Wang, X. Wang, W. Ruan, B. Zhao, J.R. Lombardi, Raman investigation of nanosized TiO2: effect of crystallite size and quantum confinement, J. Phys. Chem. C 116 (2012) 8792–8797.
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