Design considerations of AlGaInAs quaternary nanowires for mid-infrared applications
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference25 articles.
1. Self-consistent optimization of [111]-AlGaInAs/InP MQWs structures lasing at 1.55 μm by a genetic algorithm
2. Optical loss suppression in long-wavelength semiconductor lasers at elevated temperatures by high doping of the n-waveguide
3. Dependence on well widths of total optical absorption coefficient of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells
4. Second and third harmonic generation associated to infrared transitions in a Morse quantum well under applied electric and magnetic fields
5. Effect of applied electric field on the nonlinear optical properties of modulation-doped GaAs/Al Ga1-As double quantum well
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