Improved theoretical calculations of InN in its X3Σ− ground state and in the first 3Π excited state
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference29 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. Temperature dependence of the fundamental band gap of InN
3. Nitride-based semiconductors for blue and green light-emitting devices
4. Optical properties and electronic structure of InN and In-rich group III-nitride alloys
5. Structure and electronic properties of InN and In-rich group III-nitride alloys
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