Ablation threshold measurements and surface modifications of 193 nm laser irradiated 4H-SiC-Reference-Cited by-同舟云学术

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Ablation threshold measurements and surface modifications of 193 nm laser irradiated 4H-SiC

Published:2018-12 Issue: Volume:713 Page:194-202
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Mohammed A.F.,Al-Jarwany Q.A.,Clarke A.J.,Amaral T.M.,Lawrence J.,Kemp N.T.,Walton C.D.

Funder

Higher Committee for Education Development in Iraq

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference46 articles.

1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review;Casady;Solid. State. Electron.,1996

2. ArF-excimer-laser annealing of 3C-SiC films - diode characteristics and numerical simulation;Mizunami;Opt. Laser Technol.,2003

3. P. Lv, Z. Chen, and A. H. X. Zhang, “Effect of Laser Annealing on amorphous Silicon Carbide Films Prepared by PECVD,” in: Proceedings of the 2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2009, pp. 743–746.

4. S. Gupta, “Pulsed laser ablation and micromachining of 4H and 6H SiC wafers for high-temperature MEMS sensors,” Iowa State University, 2008.

5. Picosecond pulsed laser ablation and micromachining of 4H-SiC wafers;Molian;Appl. Surf. Sci.,2009

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