Active to passive transition in the oxidation of SiC
Author:
Publisher
Elsevier BV
Subject
General Materials Science,General Chemical Engineering,General Chemistry
Reference7 articles.
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2. Reactions between Gases and Solids, AGARD Conference;Antill,1969
3. The Oxidation of Silicon Carbide at 1150° to 1400°C and at 9 × 10[sup −3] to 5 × 10[sup −1] Torr Oxygen Pressure
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