Emission and strain in InGaAs/GaAs quantum wells with InAs quantum dots obtained at different temperatures-Reference-Cited by-同舟云学术

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Emission and strain in InGaAs/GaAs quantum wells with InAs quantum dots obtained at different temperatures

Published:2012-10 Issue:4 Volume:52 Page:844-850
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Mascorro Alquicira R.L.,Casas Espinola J.L.,Velázquez Lozada E.,Polupan G.,Shcherbyna L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. Quantum Dot Heterostructures;Bimberg,2001

2. Quantum dot lasers: breakthrough in optoelectronics

3. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

4. Theoretical modeling and experimental characterization of InAs∕InGaAs quantum dots in a well detector

5. Resonant cavity enhanced InAs∕In[sub 0.15]Ga[sub 0.85]As dots-in-a-well quantum dot infrared photodetector

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