Electrical, dielectric characterizations and optoelectronic applications of epitaxially grown Co/n-CuO/p-Si heterojunctions-Reference-Cited by-同舟云学术

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Electrical, dielectric characterizations and optoelectronic applications of epitaxially grown Co/n-CuO/p-Si heterojunctions

Published:2019-11 Issue: Volume:135 Page:106277
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Farag A.A.M.,Ashery A.,Salem M.A.

Funder

Physics Department, Faculty of Science and Arts, Jouf University

Physics Department, Faculty of Education, Ain Shams University and Solid-State Physics Department

NRC

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference43 articles.

1. The interface states analysis of the MIS structure as a function of frequency;Tataroglu;Microelectron. Eng.,2008

2. On the temperature-dependent dielectric properties, conductivity and resistivity of MIS structures at 1 MHz;Eroglu;Microelectron. Eng.,2012

3. Temperature-dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures;Arslan;J. Non-Cryst. Solids,2010

4. Sensing mechanisms of Pt/-Ga2O3/GaN hydrogen sensor diodes;Lee;Sens. Actuators, B,2010

5. On the temperature-dependent profile of interface states and series resistance characteristics in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures;Demirezen;Physica B,2010

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