Tuning in spectral response due to rapid thermal annealing on dot-in-a-well infrared photodetectors
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Quantum dots-in-a-well infrared photodetectors
2. Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation
3. Device model for quantum dot infrared photodetectors and their dark-current characteristics
4. The theory of quantum-dot infrared phototransistors
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2. Impact of ultra-thin quaternary capping on modulation doped p-i-p quantum dots (InAs/GaAs) based infrared detector;Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI;2019-03-04
3. Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate;Journal of Lightwave Technology;2018-07-01
4. Minimization of material inter-diffusion for thermally stable quaternary-capped InAs quantum dot via strain modification;Superlattices and Microstructures;2017-05
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