Theoretical study of indirect excitons’ lifetime in coupled AlGaN/GaN quantum wells in the presence of an electrostatic trap-Reference-Cited by-同舟云学术

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Theoretical study of indirect excitons’ lifetime in coupled AlGaN/GaN quantum wells in the presence of an electrostatic trap

Published:2011-04 Issue:4 Volume:49 Page:487-495
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Asgari Asghar,Safa Sara,Mouchliadis Leonidas

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. The Blue Laser Diode;Nakamura,1997

2. B. Gil, Group III Nitride Semiconductor Compounds, Clarendon, Oxford, 1998.

3. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes;Nakamura,2000

4. Electrostatic traps for dipolar excitons;Rapaport;Phys. Rev. B,2005

5. Handbook of Mathematical Functions,1964

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2. Weak-Light Nonlinearity Using a Dark State in Coupled Quantum Dots;Journal of the Physical Society of Japan;2017-08-15

3. Exciton binding energy in coupled double zinc blende GaN/InGaN quantum well;physica status solidi (b);2016-11-08

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