Confinement-dependent exciton binding energy in wurtzite GaN/Al In1−N quantum dots-Reference-Cited by-同舟云学术

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Confinement-dependent exciton binding energy in wurtzite GaN/Al In1−N quantum dots

Published:2017-09 Issue: Volume:109 Page:254-258
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Park Seoung-Hwan,Hong Woo-Pyo,Kim Jong-Jae

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Quantum Dot Heterostructure;Bimberg,1999

2. Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots

3. Model of photoluminescence temperature dependence in GaN/AlN quantum dot structures

4. Excitonic complexes in GaN/(Al,Ga)N quantum dots

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly Efficient and Flexible Photosensors with GaN Nanowires Horizontally Embedded in a Graphene Sandwich Channel;ACS Applied Materials & Interfaces;2018-10-16

2. Structural and Optical Properties of GaN Nanowires Formed on Si(111);Applied Science and Convergence Technology;2018-09-30

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