Dependence of excitonic energies on barrier thicknesses: A case of ZnO/Mg0.1Zn0.9O multi-quantum wells
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
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4. Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes
5. Growth evolution of surface nanowires and large anisotropy of conductivity on MgZnO/ZnO quantum wells based on M-nonpolar (10−10) ZnO
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ab-initio DFT-FP-LAPW/TB-mBJ/LDA-GGA investigation of structural and electronic properties of MgxZn1−xO alloys in Würtzite, Rocksalt and Zinc-Blende phases;Superlattices and Microstructures;2017-09
2. Lower temperature growth of single phase MgZnO films in all Mg content range;Journal of Alloys and Compounds;2015-04
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