The hydrostatic pressure and temperature effects on hydrogenic impurity binding energies in GaAs/InxGa1-xAs/GaAs square quantum well
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference25 articles.
1. Band lineups and deformation potentials in the model-solid theory
2. Binding energy of shallow impurities in a polar quantum well wire
3. Structural and optical studies of InxGa1−xAs/GaAs multiple quantum wells
4. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
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1. The Impurity States in Different Shaped InxGa1-xAs/GaAs Quantum Wells under the Influence of Temperature and Hydrostatic Pressure;Journal of Superconductivity and Novel Magnetism;2024-07-27
2. The effect of pressure on the thermodynamic properties of hydrogenic impurity in the GaAs semiconductor quantum well;Philosophical Magazine;2024-05-13
3. Hydrostatic pressure, electric field, non-parabolicity and polaronic mass effects on the donor binding energy in a semimagnetic double quantum well;The European Physical Journal Plus;2023-10-27
4. The Impurity States in InxGa1-xAs/GaAs Core-shell Quantum Dot Under the Influence of Hydrostatic Pressure and Temperature;Journal of Superconductivity and Novel Magnetism;2023-09
5. Hydrostatic Pressure Effect on the Thermodynamic Properties of Quantum Wire Under a Crossed Electromagnetic Field;Journal of Low Temperature Physics;2023-08-12
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