Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection-Reference-Cited by-同舟云学术

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Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection

Published:2010-02 Issue:2 Volume:47 Page:274-287
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Mustafa Farahiyah,Parimon Norfarariyanti,Hashim Abdul Manaf,Abd Rahman Shaharin Fadzli,Abdul Rahman Abdul Rahim,Osman Mohd Nizam

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Dawn of the E-Bomb

2. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

3. Novel heterodimensional diodes and transistors

4. http://www.rciqe.hokudai.ac.jp 2005

5. Metal–Semiconductor Schottky Barrier Junctions and their Applications;Sharma,1984

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1. Electrical characteristics of Al/AlGaAs/GaAs diode with high-Al concentration at the interface;Journal of Materials Science: Materials in Electronics;2024-01

2. Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy;Microelectronics Journal;2022-04

3. A low-cost fabrication method for sub-millimeter wave GaAs Schottky diode;Semiconductor Science and Technology;2017-09-01

4. Barrier modification of Au/n-GaAs Schottky structure by organic interlayer;Indian Journal of Physics;2015-08-29

5. Enhancement in electrical properties of Au/n-GaAs Schottky diodes exposed to 60Co gamma rays;Materials Science in Semiconductor Processing;2014-05

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