Polarization field effects on the recombination dynamics in low-In-content InGaN multi-quantum wells-Reference-Cited by-同舟云学术

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Polarization field effects on the recombination dynamics in low-In-content InGaN multi-quantum wells

Published:2004-10 Issue:4-6 Volume:36 Page:615-624
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Armani N.,Rossi F.,Ferrari C.,Lazzarini L.,Vinattieri A.,Colocci M.,Reale A.,Di Carlo A.,Grillo V.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Optical properties of nitride heterostructures

2. First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory

3. Exciton localization in InGaN quantum well devices

4. Origin of Luminescence from InGaN Diodes

5. Temperature dependence of the fundamental band gap of InN

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessment of Semiconductors by Scanning Electron Microscopy Techniques;Comprehensive Semiconductor Science and Technology;2011

2. Performance improvement of InGaN/GaN light-emitting diodes with triangular- shaped multiple quantum wells;Semiconductor Science and Technology;2009-11-03

3. Power-dependent cathodoluminescence in III–nitrides heterostructures: from internal field screening to controlled band-gap modulation;Characterization of Semiconductor Heterostructures and Nanostructures;2008

4. Effects of charge density on the luminescence energy shift of GaN quantum wells: A variational approach;Solid State Communications;2007-10

5. Low-temperature In2O3nanowire luminescence properties as a function of oxidizing thermal treatments;Nanotechnology;2007-08-07

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