The role of Mg complexes in the degradation of InGaN-based LEDs-Reference-Cited by-同舟云学术

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The role of Mg complexes in the degradation of InGaN-based LEDs

Published:2004-10 Issue:4-6 Volume:36 Page:859-868
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Rossi F.,Armani N.,Salviati G.,Pavesi M.,Meneghesso G.,Levada S.,Zanoni E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Optical degradation of InGaN/AlGaN light‐emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition

2. Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents

3. Single-quantum well InGaN green light emitting diode degradation under high electrical stress

4. Hole Compensation Mechanism of P-Type GaN Films

5. Characterization of GaN-based metal–semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability of High-Voltage GaN-Based Light-Emitting Diodes;IEEE Transactions on Device and Materials Reliability;2019-06

2. Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress;Microelectronics Reliability;2018-09

3. Hydrogen-related, deeply bound excitons in Mg-doped GaN films;Applied Physics Letters;2013-08-19

4. Failure Analysis of InGaN/GaN High Power Light-Emitting Diodes Fabricated with ITO Transparent p-Type Electrode During Accelerated Electro-Thermal Stress;Journal of Nanoscience and Nanotechnology;2012-05-01

5. High-current Electro-optical Degradation of InGaN/GaNLight-emitting Diodes Fabricated with Ag-based Reflectors;Journal of the Korean Physical Society;2009-09-15

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