Influence of density inhomogeneity on the quantum capacitance of graphene nanoribbon field effect transistors-Reference-Cited by-同舟云学术

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Influence of density inhomogeneity on the quantum capacitance of graphene nanoribbon field effect transistors

Published:2012-12 Issue:6 Volume:52 Page:1093-1102
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Kliros G.S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference48 articles.

1. The electronic properties of graphene;Castro Neto;Rev. Mod. Phys.,2009

2. A graphene field effect device;Lemme;IEEE Electron Device Lett.,2007

3. Current status of graphene transistors;Lemme;Solid State Phenom.,2010

4. Graphene transistors;Schwierz;Nat. Nanotechnol.,2010

5. Graphene: a one-atom-thick material for microwave devices;Dragoman;Rom. J. Inf. Sci. Technol.,2008

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1. Analytic modelling of quantum capacitance and carrier concentration for β12-borophene FET based gas sensor;Physica B: Condensed Matter;2023-11

2. Nonlinearity Analysis of Quantum Capacitance and its Effect on Nano-Graphene Field Effect Transistor Characteristics;Journal of Electronic Materials;2022-06-04

3. Quantum electrical transport of n-type and p-type AGNRs junctions;Physica E: Low-dimensional Systems and Nanostructures;2020-10

4. Strain effects on the quantum capacitance of graphene nanoribbon devices;Applied Surface Science;2020-02

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