Theoretical investigation of the phonon-assisted tunneling in TFET with an indirect band gap semiconductor
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference34 articles.
1. Tunnel field-effect transistors as energy-efficient electronic switches
2. Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor
3. A subthermionic tunnel field-effect transistor with an atomically thin channel
4. An efficient atomistic quantum mechanical simulation on InAs band-to-band tunneling field-effect transistors
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