Effect of the δ-potential on spin-dependent electron tunneling in double barrier semiconductor heterostructure
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. Electronic analog of the electro‐optic modulator
2. Spin-dependent transport in II-VI magnetic semiconductor resonant tunneling diode
3. The effect of transverse wave vector and magnetic fields on resonant tunneling times in double-barrier structures
4. Spin-dependent electronic tunneling at zero magnetic field
5. Verification of Bruno-Gnanasekar- Karunakaran- Chandramohan observation in non-magnetic semiconductor/diluted magnetic semiconductor heterostructure
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1. Cotrolling electron-spin filter via electric field in layered semiconductor nanostructure;Vacuum;2022-12
2. TUNABLE ELECTRON-SPIN POLARIZATION BY δ-POTENTIAL IN LAYERED SEMICONDUCTOR NANOSTRUCTURE;Surface Review and Letters;2021-10-06
3. Control of electron-spin polarization via δ-potential in 3-layered semiconductor heterostructure modulated by Rashba spin-orbit coupling;Journal of Magnetism and Magnetic Materials;2021-06
4. Manipulating Dresselhaus-spin-orbit-coupling induced electron-spin polarization via δ-doping in 3-layered semiconductor heterostructure;Physica E: Low-dimensional Systems and Nanostructures;2021-05
5. Spin-Dependent Electron Tunneling in ZnSe/Zn 1− x Mn x Se Heterostructures with Double δ -Potentials;Communications in Theoretical Physics;2019-03
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