2D modeling based comprehensive analysis of short channel effects in DMG strained VSTB FET-Reference-Cited by-同舟云学术

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2D modeling based comprehensive analysis of short channel effects in DMG strained VSTB FET

Published:2018-06 Issue: Volume:118 Page:16-28
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Saha Priyanka,Banerjee Pritha,Sarkar Subir Kumar

Funder

“Visvesvaraya PhD Scheme”, Deit Y, Government of India

UGC

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. Emerging research devices;Int. Technol. Roadmap Semicond.,2009

2. The effect of short channel on nanoscale SOI MOSFETs;Rechem;Afr. Phys. Rev.,2008

3. A comprehensive two dimensional analytical study of a Nanoscale Linearly Graded Binary Metal Alloy Gate Cylindrical Junctionless MOSFET for improved short channel performance;Sarkhel;J. Comput. Electron.,2014

4. Scaling theory for double-gate SOI MOSFET's;Suzuki;IEEE Trans. Electron. Dev.,1993

5. Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's;Takato;IEEE Trans. Electron. Dev.,1991

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1. Silicon and Germanium Vertical Super-Thin Body (VSTB) FET: A Comparative Performance Overview Including Architectural Stress-Strain Impact;ECS Journal of Solid State Science and Technology;2022-04-01

2. Explicit Threshold Voltage Modeling Insight for Short Channel Characterization of a WFE Elliptical GAA Strained-Si MOSFET;Journal of Electronic Materials;2020-10-15

3. Interface Trap Charge Induced Threshold Voltage Modeling of WFE High-K SOI MOSFET;Silicon;2020-01-27

4. 3-D Analytical Modeling of Triple Metal Tri-Gate Graded Channel High-k SON TFET for Improved Performance;Silicon;2019-12-04

5. An insight to the performance of vertical super-thin body (VSTB) FET in presence of interface traps and corresponding noise and RF characteristics;Applied Physics A;2019-11-26

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