Impact of scaling voltage and size on the performance of Side-contacted Field Effect Diode-Reference-Cited by-同舟云学术

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Impact of scaling voltage and size on the performance of Side-contacted Field Effect Diode

Published:2018-05 Issue: Volume:117 Page:406-412
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Touchaei Behnam Jafari,Manavizadeh Negin^ORCID

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Progress in digital integrated electronics;Moore,1975

2. Digital Integrated Circuits Analysis and Design;Ayers,2009

3. A brief analysis of the field effect diode and break down transistor;Raissi;IEEE Trans. Electron. Dev.,1996

4. F. Raissi and I. Sheikhian, Nano-scale transistor device with large current handling capability, Europe Patent 1 965 437 A1, Sep. 3, 2008.

5. SOI field-effect diode dram cell: design and operation;Badwan;IEEE Trans. Electron. Device Lett.,2013

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Noise-Immune 6T SRAM Bit-Cells Based on Side-Contacted FED;IEEE Transactions on Electron Devices;2020-12

2. Double-Gate Field-Effect Diode: A Novel Device for Improving Digital-and-Analog Performance;IEEE Transactions on Electron Devices;2020-01

3. Performance estimation of junctionless field effect diode;Applied Physics A;2019-07-08

4. Junctionless Field Effect Diode (JL-FED): A First-Principles Study;ECS Journal of Solid State Science and Technology;2019

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