Surface photovoltage spectroscopy study of InAs quantum dot in quantum well multilayer structures for infrared photodetectors-Reference-Cited by-同舟云学术

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Surface photovoltage spectroscopy study of InAs quantum dot in quantum well multilayer structures for infrared photodetectors

Published:2015-12 Issue: Volume:88 Page:711-722
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Donchev V.,Ivanov Ts.,Ivanova Ts.,Mathews S.,Kim J.O.,Krishna S.

Funder

Sofia University

Korean Evaluation Institute of Industrial Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Quantum dot infrared photodetector;Liu;Opto-electronics Rev.,2003

2. Review of current progress in quantum dot infrared photodetectors;Barve;Laser Phot. Rev.,2009

3. High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature;Lim;Appl. Phys. Lett.,2007

4. High temperature operation of quantum dots-in-a-well infrared photodetectors;Barve;Infrared Phys. Technol.,2011

5. Quantum dot infrared photodetectors;Barve,2011

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3. Defect levels and interface space charge area responsible for negative photovoltage component in InAs/GaAs quantum dot photodetector structure;Microelectronic Engineering;2020-06

4. GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy;Journal of Materials Science: Materials in Electronics;2019-12-16

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