Study on strain relaxation in AlGaN/GaN superlattices grown by metal-organic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. III-nitride semiconductors for intersubband optoelectronics: a review;Beeler;Semicond. Sci. Technol.,2013
2. The effect of AlGaN bulk and AlGaN/GaN superlattice cladding layers on performance characteristics of deep violet InGaN DQW lasers;Amirhoseiny;Vacuum,2017
3. Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures;Lim;Nanotechnology,2016
4. Systematic experimental and theoretical investigation of intersubband absorption in GaN∕AlN quantum wells;Tchernycheva;Phys. Rev. B,2006
5. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate;Nakamura;Appl. Phys. Lett.,1998
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