Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination-Reference-Cited by-同舟云学术

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Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination

Published:2018-02 Issue: Volume:114 Page:143-153
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Bai Zhiyuan,Du Jiangfeng,Xin Qi,Li Ruonan,Yu Qi

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure;Ha;Superlatt. Microstruct.,2006

2. Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode;Chang;Solid-State Electron.,2015

3. Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests;Hu;IEEE Electron Device Lett.,2017

4. High-voltage and low-leakage AlGaN/GaN tri-anode Schottky diodes with integrated tri-gate transistors;Ma;IEEE Electron Device Lett.,2017

5. 2.07-kV AlGaN/GaN Schottky barrier diodes on silicon with high Baliga's figure-of-merit;Tsou;IEEE Electron Device Lett.,2016

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2. Simulation design of high Baliga's figure of merit normally-off P GaN gate AlGaN/GaN heterostructure field effect transistors with junction field plates;Superlattices and Microstructures;2018-11

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