Improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes using electron blocking layer with a heart-shaped graded Al composition-Reference-Cited by-同舟云学术

Improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes using electron blocking layer with a heart-shaped graded Al composition

Published:2018-04 Issue: Volume:116 Page:215-220
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Kwon M.R.,Park T.H.,Lee T.H.,Lee B.R.,Kim T.G.

Funder

National Research Foundation of Korea (NRF)

Korean government

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. Hole Transport Manipulation To Improve the Hole Injection for Deep Ultraviolet Light-Emitting Diodes

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