Role of a thin interfacial oxide layer and optimized electrodes in improving the design of a Graphene/n-Si MSM photodetector-Reference-Cited by-同舟云学术

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Role of a thin interfacial oxide layer and optimized electrodes in improving the design of a Graphene/n-Si MSM photodetector

Published:2021-12 Issue: Volume: Page:107121
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Bencherif H.,Dehimi L.,Faggio G.,Messina G.,Pezzimenti F.,Meddour F.,Abdi M.A.,Della Corte F.G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference53 articles.

1. Recent advances in ultraviolet photodetectors;Alaie;Mater. Sci. Semicond. Process.,2015

2. Comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures;Sang;Sensors,2013

3. Wide-bandgap semiconductor ultraviolet photodetectors;Monroy;Semicond. Sci. Techol.,2003

4. SiC Schottky Diodes for harsh environment space applications;Godignon;IEEE Trans. Ind. Electron.,2011

5. Silicon based near infrared photodetector using self-assembled organic crystalline nano-pillars;Ajiki;Appl. Phys. Lett.,2016

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4. Plasmon-enhanced Graphene/4H–SiC /graphene metal-semiconductor-metal ultraviolet photodetector: Concept and optimization;Physica B: Condensed Matter;2023-02

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