Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers-Reference-Cited by-同舟云学术

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Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

Published:2017-02 Issue: Volume:102 Page:147-154
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Bao Meng-tian,Wang Ying

Funder

Excellent Youth Foundation of Heilongjiang Province of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference29 articles.

1. Improved high-voltage lateral RESURF MOSFETs in 4H–SiC;Banerjee;IEEE Electron Device Lett.,2001

2. Novel SiC accumulation-mode power MOSFET;Liewih;IEEE Trans. Electron Devices,2001

3. A comparative performance study of a 1200 V Si and SiC MOSFET intrinsic diode on an induction heating inverter;Jordan;Power Electron. IEEE Trans.,2014

4. 930-V 170-mΩ·cm2 lateral two-zone RESURF MOSFETs in 4H-SiC with no annealing;Wang;IEEE Electron Device Lett.,2004

5. 1580-V 40-mΩ·cm2 Double-RESURF MOSFETs on 4H-SiC (0001);Noborio;IEEE Electron Device Lett.,2009

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1. Review of the SiC LDMOS power device;Journal of Semiconductors;2024-08-01

2. Study of ultra-low specific on-resistance and high breakdown voltage SOI LDMOS based on electron accumulation effect;Engineering Research Express;2023-08-29

3. Accumulation-Mode Silicon Carbide Laterally Diffused Metal Oxide Semiconductor with Low Specific on Resistance;Journal of Nanoelectronics and Optoelectronics;2022-08-01

4. Improvement the Breakdown Voltage and the On-resistance in the LDMOSFET: Double Buried Metal Layers Structure;Silicon;2020-09-16

5. Novel SiC/Si heterojunction LDMOS with electric field modulation effect by reversed L-shaped field plate;Results in Physics;2020-03

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