Determination of diffusion length in photovoltaic crystalline silicon by modelisation of light beam induced current-Reference-Cited by-同舟云学术

Determination of diffusion length in photovoltaic crystalline silicon by modelisation of light beam induced current

Published:2009-04 Issue:4-5 Volume:45 Page:393-401
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Sayad Y.,Kaminski A.,Blanc D.,Nouiri A.,Lemiti M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Influence of oxygen on the recombination strength of dislocations in silicon wafers

2. S. Amtablian, D. Eon, A. Kaminski, A. Fave, P. Roca i Cabarrocas, P.J. Ribeyron, M. Lemiti, Proc. 22th European Photovoltaic Solar Energy Conference, Milan, Italy, 2007, p. 1990

3. Light beam induced current and infrared thermography studies of multicrystalline silicon solar cells

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