Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes-Reference-Cited by-同舟云学术

Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes

Published:2016-08 Issue: Volume:96 Page:220-225
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Liu Wei,Zhao Degang,Jiang Desheng,Chen Ping,Liu Zongshun,Zhu Jianjun,Yang Jing,He Xiaoguang,Li Xiaojing,Li Xiang,Liang Feng,Liu Jianping,Zhang Liqun,Yang Hui,Zhang Yuantao,Du Guotong

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Basic Research Project of Jiangsu Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Efficiency droop in light-emitting diodes: Challenges and countermeasures

2. Efficiency droop in nitride-based light-emitting diodes

3. Electron-leakage-related low-temperature light emission efficiency behavior in GaN-based blue light-emitting diodes

4. (11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates

5. Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission

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