Understanding the overall shape of the output characteristics from the change in the channel potential profile for nanowire FET-Reference-Cited by-同舟云学术

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Understanding the overall shape of the output characteristics from the change in the channel potential profile for nanowire FET

Published:2017-01 Issue: Volume:101 Page:191-199
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Sarkar Niladri

Funder

BITS-Pilani Seed

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. Quantum Transport: Atom to Transistor;Datta,2006

2. Electronic Transport in Mesoscopic Systems;Datta,1997

3. Transport in Nanostructures;Ferry,2009

4. Graphene quantum point contact transistor for DNA sensing;Girdhar;PNAS,2013

5. Carbon Nanotube and Graphene Device Physics;Philip Wong,2011

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1. Effect of Line Defects on the Band Structures, Local Density of States, and the Landau Levels for Armchair Graphene Nanoribbons in the Quantum Hall Effect Regime;Journal of Electronic Materials;2023-11-19

2. A tutorial on the NEGF method for electron transport in devices and defective materials;The European Physical Journal B;2023-08

3. An investigation of the role of line defects on the transport properties of armchair graphene nanoribbons;Applied Physics A;2022-04-24

4. Investigation of the role of defects on channel density profiles and their effect on the output characteristics of a nanowire FET;Engineering Research Express;2021-12-01

5. Effect of size quantization and quantum capacitance on the threshold voltage of a 2D nanoscale dual gate MOSFET;Engineering Research Express;2020-09-01

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