Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT-Reference-Cited by-同舟云学术

Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT

Published:2006-10 Issue:4-6 Volume:40 Page:562-566
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Ha Min-Woo,Lee Seung-Chul,Kim Soo-Seong,Yun Chong-Man,Han Min-Koo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. D. Ueda, T. Murata, M. Hikita, S. Nakazawa, M. Kuroda, H. Ishida, M. Yanagihara, K. Inoue, T. Ueda, Y. Uemoto, T. Tanaka, T. Egawa, Proc. Int. Electron Device Meeting Tech. Dig., Washington DC, 2005, p. 389

2. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

3. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

4. New Inductively Coupled Plasma–Chemical Vapor Deposition SiO2Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors

5. Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs

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