Modelling and simulation of tri-material gate stack gate all-around (TMGSGAA) MOSFET using Legendre Wavelets for analog/RF applications
Author:
Funder
SASTRA University and Department of Science and Technology
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference31 articles.
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3. Quantum simulation study of dual-material double gate (DMDG) MOSFET: NEGF approach;Arefinia,2008
4. Analysis of gate engineered SOI MOSFET for VLSI application;Ramya,2013
5. Compact analytical model of dual material gate tunneling field-effect transistor using interband tunneling and channel transport, Electron Devices;Vishnoi;IEEE Trans.,2014
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