Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method

Author:

Kaplan H.K.ORCID,Akay S.K.,Ahmetoglu M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Al-doped ZnS layers synthesized by solution growth method;Nagamani;Curr. Appl. Phys.,2012

2. Growth and characterization of ZnS nano films grown by RF magnetron sputtering on GaAs;Díaz-Reyes;Int. J. Cir. Sys. Sig. Process.,2014

3. Luminescence properties of ZnS/porous Si composites;Wang;Optik,2014

4. Structural studies of ZnS thin films grown on GaAs by RF magnetron sputtering;Gayou;Vacuum,2010

5. Reflectivity analysis of ZnS layers grown on GaAs and Si substrates by metalorganic vapour-phase epitaxy;Briot;Semicond. Sci. Technol.,1994

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