Irradiation effect on the electrical characteristics of an AlGaAs/GaAs based solar cell: Comparison between electron and proton irradiation by numerical simulation-Reference-Cited by-同舟云学术

Irradiation effect on the electrical characteristics of an AlGaAs/GaAs based solar cell: Comparison between electron and proton irradiation by numerical simulation

Published:2013-06 Issue: Volume:58 Page:44-52
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Laiadi W.,Meftah Af.,Sengouga N.,Meftah Am.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. Displacement damage correlation of proton and silicon ion radiation in GaAs;Warner;IEEE Trans. Nucl. Sci.,2005

2. High efficiency AlxGal−xAs/GaAs solar cells: Fabrication, irradiation and annealing effect;Li;Sol. Energy Mater. Sol. Cells,1996

3. Electron irradiation and thermal annealing effect on GaAs solar cells;Xianbi;Sol. Energy Mater. Sol. Cells,1998

4. Radiation-resistant solar cells for space use;Yamaguchi;Sol. Energy Mater. Sol. Cells,2001

5. Radiation-induced defects in solar cell materials;Bourgoin;Sol. Energy Mater. Sol. Cells,2001

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