Tunable electronic properties of silicene based heterojunctions with ultrathin high-к La2O3 gate dielectric-Reference-Cited by-同舟云学术

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Tunable electronic properties of silicene based heterojunctions with ultrathin high-к La2O3 gate dielectric

Published:2020-11 Issue: Volume:147 Page:106686
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Xue Mengmeng,Wei Mengjie,Sheng Haohao,Bai Dongmei,Wang Jianli

Funder

Fundamental Research Funds for the Central Universities

China University of Mining and Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference55 articles.

1. Theoretical possibility of stage corrugation in Si and Ge analogs of graphite

2. Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium

3. Beyond Graphene: Stable Elemental Monolayers of Silicene and Germanene

4. Silicon and III-V compound nanotubes: Structural and electronic properties

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1. Exploring the low-index surfaces of D52-La2O3 from the first-principles calculations;Chemical Physics;2024-11

2. Synthesis of nanoparticles of La2O3 and Ln3+: La2O3 phosphors by aloe vera gel-assisted precipitation method and study of their photoluminescence properties;Bulletin of Materials Science;2023-09-09

3. Comprehensive Study on Ultra-Wide Band Gap La₂O₃/ε-Ga₂O₃ p–n Heterojunction Self-Powered Deep-UV Photodiodes for Flame Sensing;ACS Applied Materials & Interfaces;2023-08-18

4. Dopant-sheet interaction and its role in the enhanced chemical activity of doped MoTe2;Surface Science;2022-09

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