sp3s∗ tight-binding calculation of band edges and effective masses of InAs/GaSb superlattices with different interface structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference34 articles.
1. High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range
2. Optimization of mid-infrared InAs∕GaSb type-II superlattices
3. Short-period InAs∕GaSb type-II superlattices for mid-infrared detectors
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Theory and optimisation of radiative recombination in broken-gap InAs/GaSb superlattices;Journal of Physics D: Applied Physics;2023-10-24
2. Modeling of temperature effects on band structure in type-II superlattices using an empirical tight-binding method;Applied Physics A;2022-06-21
3. Simulation of the Band Structure of InAs/GaSb Type II Superlattices Utilizing Multiple Energy Band Theories;Frontiers in Physics;2022-04-14
4. Band structure calculation in type-II InAs/GaSb superlattices detector with thermal strain using an empirical tight-binding method;Applied Physics A;2021-01
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