Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain-Reference-Cited by-同舟云学术

Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain

Published:2021-08 Issue: Volume:156 Page:106931
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Wang Haiyong^ORCID,Mao Wei,Zhao Shenglei,Chen Jiabo,Du Ming,Zheng Xuefeng,Wang Chong,Zhang Chunfu,Zhang Jincheng,Hao Yue

Funder

Shanxi Provincial Key Research and Development Project

Special Project for Research and Development in Key areas of Guangdong Province

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

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1. Reverse Blocking Enhancement‐Mode AlGaN/GaN HEMTs with Hybrid p‐GaN Ohmic Drain on the Si Substrates;physica status solidi (a);2023-12-03

2. Design of High Baliga’s Figure-of-Merit P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with P-AlGaN Field Plates;Journal of Electronic Materials;2023-04-03

3. Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review;Crystals;2022-11-07

4. Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer;Journal of Physics: Conference Series;2022-10-01

5. Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain;IEEE Electron Device Letters;2022-06