Phonon transport properties of two dimensional group-III nitrides (BN, AlN, and GaN)
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference43 articles.
1. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
3. A semi-analytical, two-dimensional model for AlGaN/GaN high-electron-mobility-transistor Schottky currents at high reverse voltages
4. Phonon hydrodynamics in two-dimensional materials
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